Removal of Black Carbon and Organic Residues

Rework and Removal of C-based Materials –
A challenge not only for semiconductor manufacturer

The deposition of carbon-based materials plays a major role in semiconductor industries. Lithography is not possible without the related photoresists. Residue free cleaning of C-based materials always was and will be challenging, even more with the industry moving towards advanced material, e.g., low-k materials, C-doped oxide, diamond like carbon (DLC), diamond. As the market of diamond deposition and laboratory grown diamond is constantly growing, it is critical to have the proper tool to clean off the residuel black carbon without damaging the diamond structure.

Microwave Plasma – Isotropic cleaning means soft and efficient cleaning

Due to its nature, the RF-plasma exposes the substrate to an energetic interaction with the plasma. Ions accelerating towards the substrate result in physical damage and contamination of the materials to be cleaned. in the removal of black carbon on diamond just a little amount of RF-bias may cause damage of the crystal structure and consequentially, irreversible discoloration. In contrast, microwave assisted plasma systems are capable to clean fast, efficient and with no impact to the substrate1.

Using MUEGGE’s microwave assisted plasma systems, the energy transfer to the substrate is extremely low, no ions are released into the process chamber. As a result, the substrate remains untouched, the active cleaning mechanism is the chemical reaction with black carbon or other carbon based residues. As the reaction is purely isotropic, no direct exposure of the residues to the plasma is required, which makes it extremely favorable for any 3D structures like MEMS or MMS.

 

1 Amorn THEDSAKHULWONG and Warawoot THOWLADDA. Journal of Metals, Materials and Minerals. Vol. 18 No. 2 pp. 137-141, 2008

 

MUEGGE’s solution – STP Product Family

MUEGGE STP Tools
  • Microwave assisted plasma efficiently uses the energy to form highly reactive, neutral particles called radicals. No ions being released into the process chamber, no damage nor contamination of the substrate is created. Therefore the MW-assisted remote plasma system is ideal for black carbon removal on diamonds or DLC. Visual aspect and physical properties of the substrate are preserved.

 

  • The radicals released from the MW assisted plasma guarantee smooth, pure chemical cleaning. As a consequence, the physical impact is extremely low and isotropic residue removal prevents further damage of the substrate material.

Microwave assisted plasma for removal of C-based materials

Figure 1
Figure 1: Temperature heating and cooling over time at a microwave power of PMW = 2000 W.

As shown in Figure 1, the radical-only formation results in little to no interaction with the substrate and the plasma chamber (low temperature), no ions in the chamber means contamination free processing. The pure chemical cleaning process can be fine-tuned without need to take physical etching into consideration.

Advantages of microwave assisted plasma cleaning

Microwave-assisted plasma allows to remove carbon based residues as well as black carbon for semiconductor applications and diamond processing.
Due to the physical properties, MW assisted plasma is specially designed for fast but smooth etching without the typical ion-attack observed for RIE systems (RF-based plasma). The radicals generated in the plasma initiate the chemical reaction at the surface only. Without measurable electrical fields and ions present at substrate level, no ion-induced physical damage occurs.
MW assisted plasma is highly environmentally compliant due to highly efficient dissociation of process gases like CF4 and NF3.

Schlagworte

Ähnliche Beiträge

항목
Power-to-X Applications Atmospheric Microwave Plasma Technology – High Temperature and Power-to-X Applications
MUEGGE’s microwave plasma torches are microwave excited plasma sources designed to work at atmospheric pressure and to generate a contact-free plasma while ensuring stable operation …
더 알아보기
항목
MEMS / 반도체 / 인조 다이아몬드 Removal of Black Carbon and Organic Residues
Rework and Removal of C-based Materials – A challenge not only for semiconductor manufacturer The deposition of carbon-based materials plays a major role in semiconductor …
더 알아보기
항목
MEMS / 마이크로웨이브 기술 / 반도체 / 인조 다이아몬드 / 자동차 Reflected Power in Microwave (-Plasma) Processes
The reflected power is defined as the portion of the power that is not coupled into the process and heads back to the generator. In …
더 알아보기
항목
반도체 마이크로웨이브 및 챔버 세척
유전체 증착 후 챔버 세척 – 등방성 마이크로웨이브 플라즈마의 경우 증착은 반도체 생산의 기둥 중 하나이므로 제어되고 반복 가능하며 깨끗한 환경에 의존합니다. 증착 공정의 한 …
더 알아보기

Tel.: +49 (0) 6164 – 9307 – 0

Fax: +49 (0) 6164 – 9307 – 93

info@muegge.de

MUEGGE Group

Hochstrasse 4 – 6

64385 Reichelsheim

Germany

Tel.: +1-209-527-8960

Fax: +1-209-527-5385

sales@muegge-gerling.com

Gerling Applied Engineering, Inc.

P.O. Box 580816

Modesto, CA 95358-0816

USA

Tel.: +49 (0) 6164 – 9307 – 0

Fax: +49 (0) 6164 – 9307 – 93

info@muegge.de

MUEGGE Group

Hochstrasse 4 – 6

64385 Reichelsheim

Germany

Tel.: +1-209-527-8960

Fax: +1-209-527-5385

sales@muegge-gerling.com

Gerling Applied Engineering, Inc.

P.O. Box 580816

Modesto, CA 95358-0816

USA

MUEGGE
제품.

개별 프로세스를위한 특별한 솔루션이 필요하십니까?