Microwave and Chamber-Clean

Chamber-Clean after Dielectrics Deposition – A case for isotropic microwave plasma

As deposition is one of the pillars of semiconductor production, it depends on a controlled, repeatable and clean environment. One challenge of the deposition process is, that deposition does not only occur on the substrate but also on the chamber walls. This is a permanent threat of particles and contamination. Hence, the complete and repeatable cleaning of the process-chamber is key for layer quality as critical dimensions keep challenging physical limits.

 

Microwave plasma is the perfect solution for removing such thick coating off the chamber walls. The advantage of microwave (MW) plasma over RF-plasma makes the difference – chamber walls can be cleaned even without direct expose to the plasma source due to its unique property of MW.

Microwave Plasma – Isotropic and fast clean

When it comes to chamber clean, RF-plasma is not ideal due to its anisotropic properties. As ion bombardment is inherent to RF-plasma, it required direct exposure of the parts to be cleaned. In reality, parts of the chamber walls are hidden to the plasma source which causes incomplete clean and subsequent flaking, particles and low yield. MW assisted plasma clean is the solution to this problem. The generated radicals reach hidden and protected areas of the chambers which are invisible to the RF-source.

Muegge remote microwave-plasma addresses these issues

When it comes to chamber clean, RF-plasma is not ideal due to its anisotropic properties. As ion bombardment is inherent to RF-plasma, it required direct exposure of the parts to be cleaned. In reality, parts of the chamber walls are hidden to the plasma source which causes incomplete clean and subsequent flaking, particles and low yield. MW assisted plasma clean is the solution to this problem. The generated radicals reach hidden and protected areas of the chambers which are invisible to the RF-source.

  • The radicals generated in the applicator reach the chamber and will do the cleaning, even if there is no direct exposure to the source. No more incomplete cleaning, the radicals reach every corner of your chamber.
  • Exposed areas cleaning first remain safe from further attack – unlike RF plasma where sputtering can alter or damage the side-walls.
  • Over-etch is safe to perform due to the chemical nature of the cleaning. No ion-bombardment causing damage to clean parts of the chamber and sensitive equipment (e.g. e-chuck).
  • Muegge’s solution for chamber clean is sustainable and energy efficient. All energy is transferred into the formation of radicals with extremely low thermal load.

Wide process range

The Muegge remote plasma clean is available for all materials which do not require corrosive chemistry, e.g.:

 

  • Silicon dioxide
  • Silicon nitride
  • Low k materials
  • Organic materials

Advantages of MW assisted plasma process

Semiconductor manufacturing requires repeatable process conditions and clean process chambers. Microwave-plasma allows to clean fast without eroding sensitive components in the chamber (i.e. electrostatic chuck).

It provides the capability for complete removal of dielectrics and organic layers at high speed (>200um/h) and high selectivity with no altering of chamber surfaces. The radicals generated produce chemical reactions at the surface, leading to pure chemical etching at high rates with extremely low thermal load.

MW assisted plasma is highly environmentally compliant due to nearly complete dissociation of process gases like CF4.

Schlagworte

Ähnliche Beiträge

Article
Semi-Conductor Microwave and Chamber-Clean
Chamber-Clean after Dielectrics Deposition – A case for isotropic microwave plasma As deposition is one of the pillars of semiconductor production, it depends on a …
Mehr erfahren
Article
Lab-Grown-Diamonds / Microwave-Technology Lab-grown diamonds II: Experts insights from a leading manufacturer
The alternative to conflict diamonds are lab-grown, conflict-free diamonds. Lab-grown diamonds are chemically, physically, optically and visually identical to mined diamonds. In this deep-dive abou …
Mehr erfahren
Article
Lab-Grown-Diamonds / Microwave-Technology Lab-grown diamonds I: Why they outshine the conventional gem
They sparkle like mined gemstone, they look like “real” diamonds, and yet, there is one crucial difference: Lab-grown or man-made diamonds do not bear the …
Mehr erfahren
Article
Automotive / MEMS / Microwave-Technology / Semi-Conductor 3D-simulation: Slim down your component development process
While developing thermoprocessing equipment, testing of prototypes and numerous repetitions cost plenty oftime and resources. 3D simulation capabilities allow you to speed up your prototyping …
Mehr erfahren

Tel.: +49 (0) 6164 – 9307 – 0

Fax: +49 (0) 6164 – 9307 – 93

sales@muegge.de

MUEGGE Group

Hochstrasse 4 – 6

64385 Reichelsheim

Germany

Tel.: +1-209-527-8960

Fax: +1-209-527-5385

sales@muegge-gerling.com

Gerling Applied Engineering, Inc.

P.O. Box 580816

Modesto, CA 95358-0816

USA